emf33 transistors rev.a 1/4 power management, dual-chip bipolar transistor emf33 z applications z dimensions (unit : mm) power management circuit z features 1) dtb513z (digital transistor) and 2sk3019 (mos fet) are housed independently in the emt6 package. 2) power switching circuit in a single package. 3) mounting cost and area can be cut in half. z structure epitaxial plannar silicon transistor z packaging specifications z equivalent circuit package code taping basic ordering unit (pieces) emf33 t2r 8000 type z absolute maximum ratings (ta=25 c) parameter v v cc symbol ? 12 v v in ? 10 to +5 limits unit supply voltage input voltage ma i c(max) ? 500 collector current ? characteristics of built-in transistor. ? parameter v v dss symbol 30 v v gss 20 limits unit drain-source voltage gate-source voltage ma i d i dp i dr i drp 100 ma 200 ma 100 ma 200 drain current continous pulsed continous pulsed reverse drain current ? pw 10ms duty cycle 50% ? ? parameter mw / total symbol 150 mw / element p d 120 limits unit power dissipation junction temperature c tj tstg 150 c ? 55 to +150 range of storage temperature ? each terminal mounted on a recommended land. ? tr2 tr1 ? 1 ? 1 esd protection diode ? 2 body diode tr1 : r 1 /r 2 =1k ? /10k ? (1) emitter (2) base (3) drain (4) source (5) gate (6) collector tr2 : mos fet ? 2 r 2 r 1 (3) (2) (1) (4) (5) (6) each lead has same dimensions emt6 0.22 1.2 1.6 ( 1 ) ( 2 ) ( 5 ) ( 3 ) ( 6 ) ( 4 ) 0.13 0.5 0.5 0.5 1.0 1.6 1pin mark abbreviated symbol : f33
emf33 transistors rev.a 2/4 z electrical characteristics (ta=25 c) parameter symbol v i(off) f t ? ? characteristics of built-in transistor. min. ??? 0.3 v v cc = ? 5v, i o = ? 100 a typ. max. unit conditions input voltage v i(on) ? 2.5 ?? vv o = ? 0.3v, i o = ? 20ma output voltage v o(on) ?? 60 ? 300 mv v o = ? 100ma, i i = ? 5ma input current i i ??? 6.4 ma v i = ? 5v output current i o(off) ??? 0.5 ua v cc = ? 12v, v i = 0v 140 ?? v o = ? 5v, i o = ? 100ma g i ? dc current gain transition frequency ? 260 ?? v ce = ? 10v, i e = 5ma, f=100mhz resistance ratio input resistance r1 0.7 1 1.3 k ? r2/r1 8 10 12 ? parameter symbol i gss y fs min. ?? 1 av gs = 20v, v ds =0v typ. max. unit conditions gate-source leakage drain-source breakdown voltage v (br)dss 30 ??? i d = 10 a, v gs =0a zero gate voltage drain current i dss ?? 1.0 av ds = 30v, v gs =0v gate-threshold voltage v gs(th) 0.8 ? 1.5 v v ds = 3v, i d =100 a ? 58 i d = 10ma, v gs = 4v r ds(on) ? ? 713 i d = 1ma, v gs = 2.5v ? static drain-source on-resistance forward transfer admittance 20 ?? ms v ds = 3v, i d = 10ma v ds = 5v v gs = 0v f=1mhz i d = 10ma v dd = 5v v gs = 5v r l = 500 ? r gs = 10 ? output capacitance input capacitance c iss ? 13 ? pf c oss ? 9 ? pf reverse transfer capacitance c rss ? 4 ? pf turn-on delay time t d(on) ? 15 ? ns rise time t r ? 35 ? ns turn-off delay time t d(off) ? 80 ? ns fall time t f ? 80 ? ns
emf33 transistors rev.a 3/4 z electrical characteristic curves 012345 0 0.05 0.1 0.15 drain current : i d (a) drain-source voltage : v ds (v) 3v 3.5v 2.5v v gs = 1.5v 4v 2v fig.1 typical output characteristics ta = 25 c pulsed 04 0.1m 100m drain current : i d (a) gate-source voltage : v gs (v) 1 10m 3 2 1m 0.2m 0.5m 2m 5m 50m 20m 200m ta = 125 c 75 c 25 c ? 25 c v ds = 3v pulsed fig.2 typical transfer characteristics ? 50 0 0 1 1.5 2 gate threshold voltage : v gs(th) (v) channel temperature : tch ( c) 0.5 ? 25 25 50 75 100 125 150 v ds = 3v i d = 0.1ma pulsed fig.3 gate threshold voltage vs. channel temperature 0.01 0.1 1 10 100 00.511.52 ta=125 ? ta=25 ? ta=-40 ? v cc =5v pulsed 0.01 0.1 1 1 10 100 1000 ta=-40 ? ta=25 ? ta=125 ? i o /i i =20/1 pulsed 0.1 1 10 0.1 1 10 100 1000 ta=-40 ? ta=25 ? ta=125 vo=0.3v pulsed 1 10 100 1000 0.1 1 10 100 1000 ta=-40 ? ta=25 ? ta=125 ? v o =5v pulsed fig.3 output current vs. input voltage intput voltage : v i (off) (v) output current : i o (ma) fig.4 dc current gain vs. output current dc current gain : g i output current : i o (ma) output voltage : v o (on) (v) fig.5 output voltage vs. output current output current : i o (ma) fig.2 input voltage vs. output current output current : i o (ma) 0 50 100 150 200 250 300 350 400 450 500 012 i i =3ma i i =2.5ma i i =2ma i i =1.5ma i i =1ma i i =0.5ma i i =0 i i =4.5ma i i =4ma i i =3.5ma i i =5ma ta=25 ? pulsed fig.1 output current vs. output voltage output voltage : v o (v) output current : i o (ma) input voltage : v i (on) (v)
emf33 transistors rev.a 4/4 0.001 1 2 50 static drain-source on-state resistance : r ds(on) ( ? ) drain current : i d (a) 0.5 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 20 ta = 125 c 75 c 25 c ? 25 c v gs = 4v pulsed fig.4 static drain-source on-state resistance vs. drain current ( ) 0.001 1 2 50 0.5 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 20 static drain-source on-state resistance : r ds(on) ( ? ) v gs = 2.5v pulsed drain current : i d (a) ta = 125 c 75 c 25 c ? 25 c fig.5 static drain-source on-state resistance vs. drain current ( ? ) 0 5 10 15 20 0 5 10 15 gate-source voltage : v gs (v) i d = 0.1a static drain-source on-state resistance : r ds(on) ( ? ) ta = 25 c pulsed i d = 0.05a fig.6 static drain-source on-state resistance vs. gate-source voltage ? 50 0 25 150 0 3 6 9 channel temperature : tch ( c ) ? 25 50 75 100 125 2 1 4 5 7 8 v gs = 4v pulsed i d = 100ma i d = 50ma static drain-source on-state resistance : r ds(on) ( ? ) fig.7 static drain-source on-state resistance vs. channel temperature 0.0001 0.001 0.01 0.02 0.5 forward transfer admittance : |yfs| (s) drain current : i d (a) 0.005 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.05 0.1 0.2 0.1 0.2 0.5 0.002 ta =? 25 c 25 c 75 c 125 c v ds = 3v pulsed fig.8 forward transfer admittance vs. drain current 200m reverse drain current : i dr (a) source-drain voltage : v sd (v) 1.5 1 0.5 0 100m 50m 20m 10m 5m 2m 1m 0.5m 0.2m 0.1m v gs = 0v pulsed ta = 125 c 75 c 25 c ? 25 c fig.9 reverse drain current vs. source-drain voltage ( ) 200m reverse drain current : i dr (a) source-drain voltage : v sd (v) 1.5 1 0.5 0 100m 50m 20m 10m 5m 2m 1m 0.5m 0.2m 0.1m ta = 25 c pulsed v gs = 4v 0v fig.10 reverse drain current vs. source-drain voltage ( ? ) 0.1 1 2 50 capacitance : c (pf) drain-source voltage : v ds (v) 0.5 0.2 0.5 1 2 5 10 20 50 5 10 20 c iss c oss c rss ta = 25 c f = 1mh z v gs = 0v fig.11 typical capacitance vs. drain-source voltage 0.1 10 20 500 swithing time : t (ns) drain current : i d (ma) 5 0.2 0.5 1 2 5 10 20 50 50 100 200 1000 2 100 ta = 25 c v dd = 5v v gs = 5v r g = 10 ? pulsed t d(off) t r t d(on) t f fig.12 switching characteristics
notes no technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of rohm co.,ltd. the contents described herein are subject to change without notice. the specifications for the product described in this document are for reference only. upon actual use, therefore, please request that specifications to be separately delivered. application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. rohm co.,ltd. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by rohm co., ltd. is granted to any such buyer. products listed in this document are no antiradiation design. appendix1-rev2.0 thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact your nearest sales office. rohm customer support system the americas / europe / asia / japan contact us : webmaster@ rohm.co. jp www.rohm.com copyright ? 2008 rohm co.,ltd. the products listed in this document are designed to be used with ordinary electronic equipment or de vices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. it is our top priority to supply products with the utmost quality and reliability. however, there is always a chance of failure due to unexpected factors. therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. rohm cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the notes specified in this catalog. 21 saiin mizosaki- cho, ukyo-ku, kyoto 615-8585, japan tel : +81-75-311-2121 fax : +81-75-315-0172 appendix
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